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Chemical vapor deposition

Chemical Vapor Deposition (CVD) is a chemical process for depositing thin films of various materials. In a typical CVD process the substrate is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit. Frequently, volatile byproducts are also produced, which are removed by gas flow through the reaction chamber.

CVD is widely used in the semiconductor industry, as part of the semiconductor device fabrication process, to deposit various films including: polycrystalline, amorphous, and epitaxial silicon, SiO2, silicon germanium, Tungsten, silicon nitride, silicon oxynitride, titanium nitride, and various high-k dielectrics.

A number of forms of CVD are in wide use and are frequently referenced in the literature. Some of these forms include: